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Photonic Neuromorphic Devices using Oxide Semiconductors
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In the last decade, oxide semiconductor based electronics have gained a considerable interest in various research areas such as display backplanes, flexible electronics, and stretchable electronics. The oxide semiconductors exhibit relatively high carrier mobility and good operational stability. Also, low-temperature processing and large-area scalability are possible by using conventional manufacturing technology such as sputtering or direct printing. Particularly, in recent, a significant number of researches have been devoted to realize emerging electronics including opto-electronic and neuromorphic devices. In addition, the metal-oxide semiconductors can be hybridized with various nano-materials like graphene nanosheets, reduced graphene oxides, and quantum dots to alter their inherent physical nature and to obtain new functionalities. Here, we introduce our progress on the fabrication of solution-processed oxide materials and their utilization in neuromorphic systems. Specifically, synaptic devices which can be operated by optical stimulus, or so-called, photonic neuromorphic devices were fabricated by using indium-gallium-zinc oxide and important synaptic functions such as short-term memory, long-term memory, and neural facilitation were emulated. Moreover, a new type of photonic neuromorphic device is demonstrated which has the crossbar structure. We discuss the operation mechanism and the emulation of various synaptic functions.