S12. ±â´É¼º »êÈ­¹°ÀÇ ½Å¹°¼ºÀÇ ÀÌÇØ¿Í ÀÀ¿ë
Organizer: È«½Â¹ü ±³¼ö(KAIST), ÃÖ¿ì¼® ±³¼ö(¼º±Õ°ü´ë) / E-mail: seungbum@kaist.ac.kr
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  • Àå¼­Çü ±³¼ö(Áß¾Ó´ë): Visualizing Functional Perovskite Oxides using X-ray Scattering
  • ±èÀ±¼® ±³¼ö(¼º±Õ°ü´ë): Intrinsic features of ferroelectric hysteresis loop
  • Ãֽÿµ ±³¼ö(POSTECH): Atomic scale understanding of strain-mediated phenomena in.functional oxides
  • ¹Ú¿îÀÍ ¹Ú»ç(KICET): ±â´É¼º »êÈ­¹°ÀÇ ½Å¹°¼º ÀÌÇØ¿Í ÀÀ¿ë
  • ¹Ú¼º±Õ ±³¼ö(ºÎ»ê´ë): Structural and Spectroscopic Views on Insulator-Metal-Transition Characteristics of epitaxial VO2 Films
  • Á¶Áö¿µ ±³¼ö(GIST): Nanosecond phase transition of ferroelectric thin films under electric field
  • ¿À»óÈ£ ±³¼ö(¼º±Õ°ü´ë): In-situ Atomic-scale Imaging of Oxygen during Structural Transition of Oxides by Negative Cs HRTEM
  • ÁøÇüÁø ±³¼ö(ºÎ»ê´ë): Anisotropic properties in NbO2 epitaxial thin films
  • ÀÌÀ±»ó ±³¼ö(¼þ½Ç´ë): Optical investigation on the defect states in functional oxides
  • ÀÌÁØÈñ ±³¼ö(UNIST): Design of bifunctional catalysts from strongly-correlated-electron oxides
  • °­ÇØ¿ë ±³¼ö(ºÎ»ê´ë): Properties of functional oxides detected by graphene device
  • ¾ç»ó¸ð ±³¼ö(¼÷¸í¿©´ë): Selective control of multiple switching pathways in BiFeO3 using trailing flexoelectric field
  • ±è°æ¹Î ±³¼ö(KAIST): Memristor for in-memory logic devices
  • ÃÖÅÃÁý ±³¼ö(¼¼Á¾´ë): °­À¯Àüü ÅͳμÒÀÚÀÇ ºñ¼±Çü¼º Çâ»ó ¿¬±¸
  • ¹ÚÁ¤¿õ ±³¼ö(°¡Ãµ´ë): Ferroelectric materials: A novel pathway for efficient solar cell